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17.5.9  AMD Opteron DP HE 2000 series Dual-Core processor (Santa Rosa, Rev. F, High Efficiency)

Identification


Model name: Opteron DP HE 2000 series Dual-Core.
Code name: Santa Rosa, Rev. F, High Efficiency.
Supplier: AMD.
Component class: CPU.

Generation


Generation: K8D.

Compatibility


64 bit technology: AMD64.

Multimedia instruction sets: MMX, Enhanced 3DNow!, SSE, SSE2, SSE3.

Cache


L1 cache: (2x) 64 kbyte instruction cache, 64 kbyte data cache (Harvard architecture).
L2 cache: (2x) 1024 kbyte.

Architecture


128 bit (dual-channel), 166/333/667 MHz, DDR2-667 memory controller: max. 8 x 512 Mbyte = 4 Gbyte (4 x 1 Gbyte double-sided Registered PC2-5300 memory module).

1000 MHz HyperTransport bus.

Memory protection: NX bit (Enhanced Virus Protection, EVP).

Virtualization technology: AMD Virtualization (AMD-V, Pacifica).

Multi-processing


Dual-core technology: two cores connected through HyperTransport bus.

Multi-processor support: dual processor.

Multiplier


Power management


Power management: Cool'n'Quiet (CnQ).

Clock speed


Clock speed Model Multiplier Introduction Order part numbers
200/1800 MHz AMD Opteron 2210 HE Dual-Core CPU 9 August 2006 OEM (stepping F2): OSP2210GAA6CQ,
PIB (stepping F2): OSP2210CQWOF,
OEM (stepping F3): OSP2210GAA6CX,
PIB (stepping F3): OSP2210CXWOF
200/2000 MHz AMD Opteron 2212 HE Dual-Core CPU 10 August 2006 OEM (stepping F2): OSP2212GAA6CQ,
PIB (stepping F2): OSP2212CQWOF,
OEM (stepping F3): OSP2212GAA6CX,
PIB (stepping F3): OSP2212CXWOF
200/2200 MHz AMD Opteron 2214 HE Dual-Core CPU 11 August 2006 OEM (stepping F2): OSP2214GAA6CQ,
PIB (stepping F2): OSP2214CQWOF,
OEM (stepping F3): OSP2214GAA6CX,
PIB (stepping F3): OSP2214CXWOF
200/2400 MHz AMD Opteron 2216 HE Dual-Core CPU 12 August 2006 OEM (stepping F2): OSP2216GAA6CQ,
PIB (stepping F2): OSP2216CQWOF,
OEM (stepping F3): OSP2216GAA6CX,
PIB (stepping F3): OSP2216CXWOF
200/2600 MHz AMD Opteron 2218 HE Dual-Core CPU 13 February 2007 OEM (stepping F3): OSP2218GAA6CX,
PIB (stepping F3): OSP2218CXWOF

Physics


Voltage: 1.20-1.25 V.
Power dissipation: 68 W TDP

Manufacturing process: 90 nm, SoI (Silicon-on-Insulator), 200 mm wafer.

Number of transistors: 227.4/243 million.

Die size: 230/219 mm2.

Packaging: Socket F.

Manufactured in: AMD Fab 30/36, Dresden, Germany.

Step level


Text:

Step levels: F2, F3.

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